Version: 1.1 Approved
2014-04-04-01
Buffer Traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements
Meneghini Matteo, Rossetto Isabella, Bisi Davide, Stocco Antonio, Chini Alessandro, Meneghesso Gaudenzio, Zanoni Enrico, Pantellini Alessio, Lanzieri Claudio
Paper for Specialistic Magazine
IEEE Transaction on Electron Devices
2014