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A GaN on SiC Process with High Power density and Efficiency
"ln this contribution, an high power density and efficiency micro hybrid circuit in C-Band, employing the GaN process developed at Selex ES, is presented. Thanks to technological improvements in the actuI process, the current collapse and knee voltage shift problems are mitigated, showing 5W/mm power density at 20 V, with a linear output power increase as function of drain bias, up to 9.5W/mm at 35V. In order to assess the actual perf orma nces of the GaN HEMTs, the most representative active device has been characterized and modeled, and a power amplifier (PA) at 5.5 GHz has been designed. The amplifier is designed utilizing second harmonic tuning strategy for high efficiency operation, thus exploiting the high-brea kdow n voltage peculiarity of GaN-based devices employing Field Piate technology. The PA shows an output power of 36.5 dBm with a power added efficiency (PAE) of 65 % and an associated gain of 12 dB while the preliminary evaluation estimate a MTTF of 107 "
Giofrè Rocco, Colantonio Paolo, Giannini Franco, Pantellini Alessio, Nanni Antonio, Dispenza Massimiliano, Lanzieri Claudio
Paper for Seminar/Symposium/Conference
EuMWeek 2013 - European Microwave Week (06-11, October 2013, Nuremberg, Germany)
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