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Highly efficient and multipaction-free P-Band GaN high power amplifier for space applications
In this paper, authors report on the development of a multipaction-free P-band GaN high power amplifier with target RF output power values of 140 W and power added efficiency beyond 70 %. On a first step, two different 80 W class singleended power modules have been designed, manufactured and tested using GaN devices from two different manufacturers. Rigorous stability analyses based on pole-zero identification techniques have been performed from early conceptual stages in order to guarantee the unconditional stability in both linear and non-linear regimes. In parallel, traditional load-pull techniques have been used in both designs to achieve the best trade-off in terms of RF output power, PAE and stability. On a second step, two identical power modules have been combined in a balanced architecture in order to obtain the required level of RF output power. Multipaction analysis and test has been carried out to guarantee reliable operation in space. The high power amplifiers have been characterized over temperature from -15 ºC to 55 ºC in pulsed and CW conditions, showing negligible drifts over temperature and Multipaction free operation. RF output power in excess of 180 W at 70% drain efficiency are also demonstrated.
Ayllon Rozas Natanael, Arpesi Pier Giorgio
Paper for Specialistic Magazine
IEEE - Microwave Theory and Techniques Journal
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