Version: 1.1 Approved
2015-03-25-01
Hot-Electron Degradation of AlGaN/GaN HEMTs during RF Operation: Correlation with GaN Buffer Design
Bisi Davide, Chini Alessandro, Soci Fabio, Stocco Antonio, Meneghini Matteo, Pantellini Alessio, Nanni Antonio, Lanzieri Claudio, Gamarra Piero, Lacam Cedric, Tordjman Maurice, di-Forte-Poisson Marie Antoinette, Meneghesso Gaudenzio, Zanoni Enrico
Paper for Specialistic Magazine
IEEE Electron Device Letters
2015