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Effects of Buffer Compensation Strategies on the Electrical Performance and RF Reliability of AlGaN/GaN HEMTs
The effects of buffer compensation strategies on the Electrical Performance and RF reliability of AlGaN/GaN HEMTs have been studied by means of static and dynamic I-V measurements, drain-current transient spectroscopy, XRD, and rf stress tests. Devices equipped with C-doped and Fe-doped GaN buffer feature improved subthreshold behaviour (lower source-to-drain leakage current, and DIBL effect) and improved RF reliability. As a drawback, devices equipped with Fe- and C-doping experience higher current dispersion effects, ascribed to higher concentration of the deep-levels E2 (0.56 eV / 10-15 cm2) and E4 (0.84 eV / 10-14 cm2).
Bisi Davide, Stocco Antonio, Rossetto Isabella, Meneghini Matteo, Rampazzo Fabiana, Chini Alessandro, Soci Fabio, Pantellini Alessio, Lanzieri Claudio, Gamarra Piero, Lacam Cedric, di-Forte-Poisson Marie Antoinette, De Salvador Davide, Bazzan Marco, Meneghesso Gaudenzio, Zanoni Enrico
Paper for Seminar/Symposium/Conference
ESREF 2015 - European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (05-09 October 2015, Toulouse, France)
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