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Hot-Electron Degradation of AlGaN/GaN HEMTs during RF Operation: Correlation with GaN Buffer Design
Comprehensive rf stress-test campaign has been performed over fourteen technologies of AlGaN/GaN HEMTs employing different GaN buffer design, including either u.i.d., C-doping and Fe-doping. Whereas no signature of gate-edge degradation have been found, good correlation emerges between buffer composition, subthreshold leakage-current, and the permanent degradation of the rf performance. The degradation mechanism, more pronounced in devices with parasitic buffer conductivity, involves the generation of further pre-existing deep-trap-state, the worsening of the dynamic current-collapse, and the subsequent degradation of rf output power.
Bisi Davide, Chini Alessandro, Soci Fabio, Stocco Antonio, Meneghini Matteo, Pantellini Alessio, Nanni Antonio, Lanzieri Claudio, Gamarra Piero, Lacam Cedric, Tordjman Maurice, di-Forte-Poisson Marie Antoinette, Meneghesso Gaudenzio, Zanoni Enrico
Paper for Specialistic Magazine
IEEE Electron Device Letters
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