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Evaluation of FET Performance and Restrictions by Low-Frequency Measurements
In this paper a characterization technique for the evaluation of transistor performance and restrictions is presented, which is based on a simple and low-cost measurement system. Experimental examples, carried out on a 0.5 x 1000 μm2 GaN HEMT, are reported. The validity of the proposed approach is demonstrated by comparing the results with the ones obtained by means of commonly adopted measurement setups.
Vadalà Valeria, Raffo Antonio, Colantonio Paolo, Cipriani Cipriani, Giannini Franco, Lanzieri Claudio, Pantellini Alessio, Nalli Andrea, Bosi Gianni, Vannini Giorgio
Paper for Seminar/Symposium/Conference
INMMIC 2014 - International workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (02-04 April 2014, Leuven, Belgium)
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