Corporate Website
Contacts
it
Technology Transfer
About us
Patents
Publications
News
Search
en
Created with Sketch.
Close menu
English
italiano
Back
it
Close menu
About us
Patents
Publications
News
Corporate Website
Contacts
Lista pubblicazioni
View PUB_LIST
Version:
1.0
Approved
it-IT
it-IT
en-US
LDO-ID
2013-07-09-02
Title
A GaN on SiC Process with High Power density and Efficiency
Abstract
"ln this contribution, an high power density and efficiency micro hybrid circuit in C-Band, employing the GaN process developed at Selex ES, is presented. Thanks to technological improvements in the actuI process, the current collapse and knee voltage shift problems are mitigated, showing 5W/mm power density at 20 V, with a linear output power increase as function of drain bias, up to 9.5W/mm at 35V. In order to assess the actual perf orma nces of the GaN HEMTs, the most representative active device has been characterized and modeled, and a power amplifier (PA) at 5.5 GHz has been designed. The amplifier is designed utilizing second harmonic tuning strategy for high efficiency operation, thus exploiting the high-brea kdow n voltage peculiarity of GaN-based devices employing Field Piate technology. The PA shows an output power of 36.5 dBm with a power added efficiency (PAE) of 65 % and an associated gain of 12 dB while the preliminary evaluation estimate a MTTF of 107 "
Authors
Giofrè Rocco, Colantonio Paolo, Giannini Franco, Pantellini Alessio, Nanni Antonio, Dispenza Massimiliano, Lanzieri Claudio
Type
Paper for Seminar/Symposium/Conference
Media
EuMWeek 2013 - European Microwave Week (06-11, October 2013, Nuremberg, Germany)
Web site
Anno
2013
Cancel
popup-close
Previous
Next
popup-close
popup-close
Close page
Enter Search Text
popup-close
LinkedIn
Twitter
Facebook
This application needs JavaScript to be enabled
2024-10-05T22:52:06Z
cookie_disclaimer:true
page_disclaimer :false