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GaN Field Effect Transistors with Integrated Antennas for THz Heterodyne Detectors
We realized GaN based Field Effect Transistors to be used both for direct and heterodyne detection of mm wave /THz signals. Polarization-sensitive, planar antennas were designed and integrated on chip. Device were fabricated relying on an industrial III-V platform. Spectral response in the 0.22- 0.38 THz range was acquired. An efficient mixing between gate voltage and drain current was shown
Dispenza Massimiliano, Crispoldi Flavia, Pantellini Alessio, Nanni Antonio, Lanzieri Claudio, Di Gaspare Alessandra, Giliberti Valeria, Casini Roberto, Ortolani Michele, Giovine Ennio, Evangelisti Florestano
Paper for Seminar/Symposium/Conference
EuMWeek 2013 - European Microwave Week (06-11, October 2013, Nuremberg, Germany)
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