Pubblicazioni

Versione: 1.0 Approvato

LDO-ID 2014-12-04-02

Titolo P-Band GaN High Power Amplifiers for Space-borne Radar Applications

Abstract

This work discusses the development of P-band GaN High Power Amplifiers with target RF output power values higher than 140 W and power added efficiencies (PAE) beyond 70 %. Two realizations of an 80 W class single-ended power module have been designed, manufactured and tested using GaN devices from two different suppliers. Rigorous stability analyses based on pole-zero identification techniques have been performed from early conceptual stages in both linear and non-linear regimes. In parallel, traditional load-pull techniques have been used in both designs to achieve the best trade-off in terms of RF output power, PAE and stability. In order to achieve the required RF output power, two identical power modules have been combined in a balanced architecture, obtaining RF output power levels in excess of 180 Watts with drain efficiency levels of 65 % by means of test. The HPAs have been characterized over temperature from -15 ºC to 55 ºC, showing negligible drifts.

Autori Ayllon Rozas Natanael, Arpesi Pier Giorgio

Tipologia Paper for Seminar/Symposium/Conference

Media 2015 IEEE/MTT-S International Microwave Symposium (16-22 May 2015, Phoenix, AZ, USA)

Sito web

Anno 2014